Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition

doi:10.1007/s40195-019-00938-8

Abstract

Abstract:

In this work, the GaN thin films were directly deposited on multilayer graphene (MLG) by plasma-enhanced atomic layer deposition. The deposition was carried out at a low temperature using triethylgallium (TEGa) precursor and Ar/N₂/H₂ plasma. Chemical properties of the bulk GaN and GaN-graphene interface were analyzed using X-ray photoelectron spectroscopy. The sharp interface between GaN and graphene was verified via X-ray reflectivity and transmission electron microscope. The microstructures and the nucleation behaviors of the GaN grown on graphene have been also studied. The results of grazing incidence X-ray diffraction and Raman spectrum indicate that the as-deposited sample is polycrystalline with wurtzite structure and has a weakly tensile stress. Optical properties of the sample were investigated by photoluminescence (PL) at room temperature. The successful growth of GaN on MLG at a low temperature opens up the possibility of ameliorating the performance of electronic and optical devices based on GaN/graphene heterojunction.

Key words: Plasma-enhanced atomic layer deposition, Gallium nitride, Graphene, Interface microstructure

Ying-Feng He, Mei-Ling Li, San-Jie Liu, Hui-Yun Wei, Huan-Yu Ye, Yi-Meng Song, Peng Qiu, Yun-Lai An, Ming-Zeng Peng, Xin-He Zheng. Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition[J]. Acta Metallurgica Sinica (English Letters), 2019, 32(12): 1530-1536.

Figures/Tables 9

Table 1 Elemental composition of bulk GaN grown on graphene investigated via XPS

C	O	Ga	N	Si
7.16%	11.61%	43.59%	37.64%	0%

Fig. 1 High-resolution XPS scans of Ga 2p3/2, N 1s, O 1s and C 1s obtained from GaN-graphene interface

Fig. 2 a XRR measurement of GaN deposited on MLG templates and b critical angle extraction

Fig. 3 Raman spectra of the sample of a graphene before (blue line) and after (black line) deposition and b the as-deposited GaN

Fig. 4 GIXRD pattern of the as-deposited GaN

Fig. 5 a, b Low-magnification cross-sectional TEM image of the as-deposited sample, c TEM image of GaN, d selected area electron diffraction (SAED) pattern of GaN

Fig. 6 HRTEM images of the GaN/graphene interface and (inset) FFT of the selected square areas

Fig. 7 Surface morphology of GaN thin film

Fig. 8 Room temperature photoluminescence spectrum of the sample

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