Optimal Design of Co/In/Cu Sputtering Target Assembly Using Finite Element Method and Taguchi Method

doi:10.1007/s40195-019-00875-6

Abstract

Abstract:

Target assembly is a key consumable material for producing thin film used in the electronic packaging and devices. The residual stresses induced during the process of soldering are detrimental to the performance of target assembly. In this work, the intensity and distribution of the soldering residual stress of Co/In/Cu target assembly subjected to a 20 W/(m² K) cooling condition corresponding to the actual air cooling process were studied, based on finite element simulation and Taguchi method, to optimize the sputtering target assembly. Effects of different control factors, including solder material, thickness of solder layer, target and backing plate, on the soldering residual stress of target assembly are investigated. The maximum residual stress is calculated as 9.28 MPa in the target located at 0.16 mm from target-solder layer interface and at a distance of 0.78 mm from symmetry axis. The optimal design in target assembly has the combination of indium solder material, cobalt target at 12 mm thick, solder layer at 0.8 mm thick, copper backing plate at 15 mm thick. Moreover, solder material is the most important factor among control factors in the target assembly.

Key words: Co target assembly, Solder, Residual stress, Simulation, Taguchi method, Optimal design

Lin Jiang, Liang Zhang, Zhi-Quan Liu. Optimal Design of Co/In/Cu Sputtering Target Assembly Using Finite Element Method and Taguchi Method[J]. Acta Metallurgica Sinica (English Letters), 2019, 32(11): 1407-1414.

Figures/Tables 16

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Material	Thermal conductivity (W/(m K))	CTE (10^-6/K)	Young’s modulus (GPa)	Poisson’s ratio
Cobalt	89.5	13.9	211	0.32
Copper	396.0	16.5	128	0.34

Material	Thermal conductivity (W/(m K))	CTE (10^-6/K)	Young’s modulus (GPa)	Poisson’s ratio
Cobalt	89.5	13.9	211	0.32
Copper	396.0	16.5	128	0.34

Temperature (K)	75	140	205	270	335	400
Poisson’s ratio	0.3
Young’s modulus (GPa)	19.11	17	14.89	12.78	10.66	8.55
CTE (10^-6/K)	23.9	26.9	28.27	30.46	32.65	34.83
Thermal conductivity (W/(m K))	99.83	94.37	89.03	83.82	78.74	73.78

Temperature (K)	75	140	205	270	335	400
Poisson’s ratio	0.3
Young’s modulus (GPa)	19.11	17	14.89	12.78	10.66	8.55
CTE (10^-6/K)	23.9	26.9	28.27	30.46	32.65	34.83
Thermal conductivity (W/(m K))	99.83	94.37	89.03	83.82	78.74	73.78

Material	S₀ (MPa)	Q/R (1/K)	A (1/s)	ξ	h₀ (MPa)	m	?	n	a
Indium	28.30	9369.7	2.33E8	49.97	0	0.300	28.30	0	1
Sn3.0Ag0.5Cu	40.16	8400.0	4.61E6	4.60	3090.00	0.162	14.37	0.038	1.56
Sn63Pb37	12.41	9400.0	4E6	1.50	1378.95	0.303	13.79	0.070	1.30