DIAMOND HETEROEPITAXY-NUCLEATION, INTERFACE STRUCTURE, FILM GROWTH

Abstract

Abstract: The present understanding of diamond heteroepitaxy by bias-enhanced chemicalvapour deposition on technologically relevant substrate materials is briefly re vi(wed.First the early stages of diamond nucleation and the diamond film growth as wellas influences of various deposition conditions are described. Then the results of mi-croscopic investigations of the structure of interfaces and of grain boundaries aresummarized.

Key words: diamond heteroepitaxy, electron microscopy, interfaces, crystal defects, chemical vapour deposition

W Jager. DIAMOND HETEROEPITAXY-NUCLEATION, INTERFACE STRUCTURE, FILM GROWTH[J]. Acta Metallurgica Sinica (English Letters), 2001, 14(6): 425-434 .

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