Acta Metallurgica Sinica (English Letters) ›› 1999, Vol. 12 ›› Issue (4): 495-499.

• Research paper • Previous Articles     Next Articles

THELATTICE STRAIN CAUSED BY ION IMPLANTATION

D.L. Ma and X.L. Mu Departmentof Physics,Liaoning University,Shenyang 110036 ,China   

  • Received:1999-08-25 Revised:1999-08-25 Online:1999-08-25 Published:2009-10-10

Abstract: The propertiesof As+ implantedsilicon with anenergy160kev, differentdosesand anneal ing temperatures (500 700℃) were studied by means of x ray double crystaldiffraction( DCD) and ellipometricspectra ( ES) . Therockingcurvesof DCDweresimulated by multi layer modelof Dynamicaltheory,toobtainstrain distributionsasafunctionof depths. The1×1016 cm 2 annealed at600℃wasfoundthataepitaxiallayer wasformed . The ESresult provedtheseconclusions.