Influence of Sputtering Power on the Structure and Electrical Properties of Bi2Fe4O9 Thin Films

doi:10.1007/s40195-017-0537-z

Abstract

Abstract:

Bismuth ferrite (Bi₂Fe₄O₉) thin films were grown on p-type Si (100) substrate by radio-frequency magnetron sputtering at 873 K. X-ray diffraction, field emission scanning electron microscopy and Raman spectroscopy studies revealed that the grown films have single-phase polycrystalline nature and are crystallized in orthorhombic structure. The grain size of the grown thin films was found to increase (56-130 nm) with sputtering power. Atomic force microscopy images clearly illustrated that the grown thin films have smooth surface. Energy-dispersive X-ray analysis revealed the presence of Bi, Fe and O elements with desired ratio and also the absence of impurities in the grown films. Analysis of ferroelectric hysteresis loops revealed that the remanent polarization and coercive field increase with the increase in sputtering power. Vicker’s hardness analysis showed that the hardness of films strongly depends on the grain size and film thickness, which are mainly determined by the sputtering power. The above observations revealed that Bi₂Fe₄O₉ thin film deposited at higher sputtering power has good crystallinity and shows better electrical properties.

Key words: Bi₂Fe₄O₉, Thin films, Ferroelectric, Sputtering, X-ray diffraction, Hardness

M. Santhiya, K.S. Pugazhvadivu, K. Tamilarasan, C. Rangasami. Influence of Sputtering Power on the Structure and Electrical Properties of Bi₂Fe₄O₉ Thin Films[J]. Acta Metallurgica Sinica (English Letters), 2017, 30(7): 650-658.

Figures/Tables 12

Fig. 1 XRD patterns of the Bi2Fe4O9 films deposited at various sputtering powers

Table 1 Calculated parameters of Bi2Fe4O9 thin films from XRD patterns

Sample	Strain (×10^-2)	Dislocation density lines/m²	Crystalline size nm (from XRD)	Grain size nm (from FE-SEM)	Film thickness (nm)
A	3.6536	3.1 × 10^-4	56	60-70	220
B	2.7939	1.8 × 10^-4	74	78-85	246
C	1.7193	7.9 × 10^-5	112	110-120	332
D	1.7192	6.9 × 10^-5	120	120-130	350

Fig. 2 Crystalline size as a function of sputtering power

Fig. 3 FE-SEM images of Bi2Fe4O9 films deposited at sputtering power of a 40 W, b 60 W, c 80 W, d 100 W

Fig. 4 Raman scattering spectra of the Bi2Fe4O9a powder, b thin films

Table 2 Raman active modes observed for the Bi2Fe4O9 thin films

Raman frequencies (cm^-1)
Raman modes	B1 g(2)	B3 g(2)	A_g(4)	B_2g(3)	B_1g(4) B_3g(4)	A_g(5) B_2g(6)	A_g(6) B_1g(5) B_2g(6)	A_g(7) B_1g(6)	A_g(5)	A_g(8) B_3g(6)	B_1g(9)	A_g(10)	A_g(11)	B_1g(11)	B_1g(12)
Bi₂Fe₄O₉ (100 W)	120	182	229	244	306	324	337	362	398	437	618	647	726	740	826

Fig. 5 AFM images of Bi2Fe4O9 films deposited at various sputtering powers of a 40 W, b 60 W, c 80 W, d 100 W

Fig. 6 Dependence of the roughness as a function of sputtering power

Fig. 7 EDAX spectrum of Bi2Fe4O9 film

Fig. 8 P-E hysteresis loop of Bi2Fe4O9 films deposited at various sputtering powers of a 40 W, b 60 W, c 80 W, d 100 W

Table 3 Ferroelectric properties of Bi2Fe4O9 thin films (100 W at 4 V)

Ag/Bi₂Fe₄O₉/Ag	A	B	C	D
P_s (μC/cm²)	3.47	2.69	3.01	4.12
P_r (μC/cm²)	0.16	0.13	0.28	1.32
E_c (kV/cm)	2.12	2.85	7.53	22.88

Fig. 9 Hardness of Bi2Fe4O9 thin films deposited at variation of sputtering powers

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Influence of Sputtering Power on the Structure and Electrical Properties of Bi₂Fe₄O₉ Thin Films

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