Acta Metallurgica Sinica (English Letters) >
Preparation and Characterization of Cu2ZnSn(SxSe1-x)4 Thin Films by Synchronous Sulfo-Selenization of Single-Source Evaporated Metallic Precursors
Received date: 2013-10-10
Revised date: 2013-12-26
Online published: 2014-10-16
Cu2ZnSn(S,Se)4 (CZTSSe) thin film was prepared using a simple two-step approach based on the single-source evaporation and synchronous sulfo-selenization. Composition, microstructure, morphology, and properties of the as-prepared CZTSSe thin films were investigated. XRD and Raman patterns confirmed the formation of single-phase CZTSSe solid solutions. SEM results showed that the CZTSSe thin film had a uniform morphology and large grains. EDS results revealed the composition of CZTSSe film was Cu:Zn:Sn:S:Se = 23.7:12.6:12.2:37.7:13.8 (in at%), which was in accordance with the stoichiometric Cu2ZnSn(S,Se)4. The optical band gap of CZTSSe thin film evaluated from its UV–Vis spectrum was 1.33 eV. The resistivity, carrier concentration, and mobility were 0.53 Ω cm, 7.9 × 1018 cm3, and 7.5 cm2/(Vs), respectively.
Key words： Cu2ZnSn(S,Se)4; Evaporation; Sulfo-selenization; Thin film
Xin Jiang , Lexi Shao , Jun Zhang , Jianmin Chen . Preparation and Characterization of Cu2ZnSn(SxSe1-x)4 Thin Films by Synchronous Sulfo-Selenization of Single-Source Evaporated Metallic Precursors[J]. Acta Metallurgica Sinica (English Letters), 2014 , 27(4) : 689 -693 . DOI: 10.1007/s40195-014-0098-3
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