Acta Metallurgica Sinica (English Letters) >
Electrical Properties and Local Domain Structure of LiNbO3 Thin Film Grown by Ion Beam Sputtering Method
Received date: 2012-01-16
Revised date: 2013-04-16
Online published: 2013-09-13
The nanocrystalline ferroelectric LiNbO3 films on (001) Si substrates with the random orientation of polycrystalline grains and the predominance of the grains with lateral orientation of the polar axis were grown using the ion beam sputtering method. The remanent polarization and the coercive field are 12 μC/cm2 and 29 kV/cm, respectively. The thermal annealing leads to the coarsening of the grains. The appearance of the “local texture,” which gives rise to the unipolarity of the heterostructures caused by the predominance of the one direction in the vertical component of the spontaneous polarization, is investigated.
Key words: LiNbO3 thin films; Ferroelectrics; Domain structure
V. Ievlev , V. Shur , M.Sumets , A. Kostyuchenko . Electrical Properties and Local Domain Structure of LiNbO3 Thin Film Grown by Ion Beam Sputtering Method[J]. Acta Metallurgica Sinica (English Letters), 2013 , 26(5) : 630 -634 . DOI: 10.1007/s40195-013-0025-z
[1]K. Benaissa, P.V. Ashrit, G. Bader, F.E. Girouard and V.V.Truong, Thin Solid Films 214 (1992) 219.
[2]T.H. Lee, F.T. Hwang, C.T. Lee and H.Y. Lee, Mater. Sci.Eng. 136 (2007) 92.
[3]V. Iyevlev, A. Kostyuchenko and M. Sumets, in: Proceeding of SPIE to the 16th International School on Quantum Electronics:Laser Physics and Applications, Nessebar, Bulgaria, September 20,2010.
[4]V.M. Ievlev, M.P. Sumets and A.V. Kostyuchenko, Mater. Sci.Forum 700 (2012) 53.
[5]Z. Zang, T. Minato, P. Navaretti, Y. Hinokuma, M. Duelk, C.Velez and K. Hamamoto, IEEE Photonics Technol. Lett. 22(2010) 721.
[6]Z. Zang, K. Mukai, P. Navaretti, M. Duelk, C. Velez and K.Hamamoto, Appl. Phys. Lett. 100 (2012) 031108.
[7]Z. Zang, K. Mukai, P. Navaretti, M. Duelk, C. Velez and K.Hamamoto, IEICE Trans. Electron. E94-C (2011) 862.
[8]V. Shur, E. Rumyantsev, R. Batchko, G. Miller, M. Fejer and R. Byer, Ferroelectrics 221 (1999) 157.
[9]V. Ya. Shur, Ferroelectrics 340 (2006) 3.
[10]A. K. Tagantsev and G. Gerra, J. Appl. Phys. 100(2006) 051607.
[11]V. Edon, D. Re`miens, S. Saada, Appl. Surf. Sci.256 (2009) 1455.
[12]A.Z. Simoes, M.A. Zaghete, B.D. Stojanovic, A.H.Gonzalez, C.S. Riccardi, M. Cantoni and J.A. Varela, J. Eur. Ceram.Soc. 24 (2004) 1607.
[13]C. Nguyen, P. V. Ashrit, G. Bader, F. Girouard and V.V.Truong, J. Appl. Phys. 76 (1994) 4327.
[14]N.S.L.S. Vasconcelos, J.S. Vasconcelos, V. Bouquet, S.M.Zanetti, E.R. Leite, E. Longo, L.E.B. Soledade, F.M. Pontes, M.Guilloux-Viry, A. Perrin, M.I. Bernardi and J.A. Varela, Thin Solid Films 436 (2003) 213.
[15]E. Soergel, J. Phys. D: Appl. Phys. 44 (2011)464003.
[16]V. Iyevlev, M. Sumets and A. Kostyuchenko, J. Mater. Sci.:Mater. Electron. 23 (2012) 913.
/
| 〈 |
|
〉 |