Effect of Au film pre-deposited at different durations as inner electrode on the electrical properties and interface microstructures of Na2O-PbO-Nb2O5-SiO2 multi-layer glass-ceramic capacitors

  • ZHU Jun ,
  • LUO Jun ,
  • ZHANG Qiang-Meng ,
  • DU Jun
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  • Advanced Electronic Materials Institute,General Research Institute for Nonferrous Metals,Beijing 100088, China

Received date: 2011-04-12

  Revised date: 2011-05-16

  Online published: 2011-12-22

Abstract

To further study the effect of sputtered Au film as transition electrode layer on the electrical properties and interface microstructures of Na2O-PbO-Nb2O5-SiO2 multi-layer glass-ceramic capacitors, Au films pre-deposited at different time were prepared by DC magnetron sputtering. Compared with the single paste electrode structure, samples with Au films pre-deposited from 6 to 18~min have the consistent performance to effectively improve the electrical properties of the capacitors, resulting in the doubled breakdown strength, an increase of equivalent capacitance by 22% and a decrease of leakage current by an order of magnitude. SEM observations indicate that the Au films with deposition time from 6 to 18~min would all help the formation of a dense electrode/dielectric interface and inhibit the diffusion of Ag. The results reveal that Au film pre-deposited for 6 min as inner electrode was sufficient to improve the interface microstructure and therefore to inhibit the Ag diffusion and enhance the overall performance of the multi-layer glass-ceramic capacitors.

Cite this article

ZHU Jun , LUO Jun , ZHANG Qiang-Meng , DU Jun . Effect of Au film pre-deposited at different durations as inner electrode on the electrical properties and interface microstructures of Na2O-PbO-Nb2O5-SiO2 multi-layer glass-ceramic capacitors[J]. Acta Metallurgica Sinica (English Letters), 2011 , 24(6) : 449 -456 . DOI: 10.11890/1006-7191-116-449

References

[1] B.J. Baliga,  Proc IEEE  89(6) (2001) 822.

[2] R.E. Wan and S.T. Chen,  Proc of the 3rd ICPADM International Conference  (Tokyo, Japan, 1991).

[3] R. Gerson and T.C. Marshall,  J Appl Phys  30(11) (1959) 1650.

[4] J. Du, B. Jones and M. Lanagan,  Mater Lett  59(22) (2005) 2821.

[5] J. Luo, J. Du, Q. Tang and C.H. Mao,  IEEE Trans Electron Devices  55(12)  (2008) 3549.

[6] W. Wersing, H. Wahl and M. Schnoller,  Ferroelectrics 87(1)  (1988) 271.

[7] J.L. Cao, L.T. Li and Z.L. Gui,  Mater Sci Eng A 99(1-3)  (2003) 127.

[8] B.Y. Yu and W.C. Wei,  J Am Ceram Soc  88(8) (2005) 2328.

[9] R.Z. Zuo, L.T. Li and Z.L. Gui,  Ceram Int  26(6) (2000) 673.

[10] R.Z. Zuo, L.T. Li and Z.L. Gui,  Ceram Int  27(8) (2001) 889.

[11] S.Y. Cho, H.J. Youn and D.W. Kim,  J Am Ceram Soc 81(11)  (1998) 3038.

[12] T. Cheng and R. Raj,  J Am Ceram Soc  72(9) (1989) 1649.

[13] H.J. Hwang, T. Nagai, T. Ohji, M. Sando and M. Toriyama, J Am Ceram Soc  81(3)  (1998) 709.

[14] H. Kanai, O. Furukawa, S. Nakamura and Y. Yamashita,  J Am Ceram Soc  76(2)  (1993) 454.

[15] Y.C. Lee,  Int J Appl Ceram Technol  7(1)  (2010)71.

[16] Y.C. Sato, H. Kanai and Y. Yamashita,  J Am Ceram Soc 79(1)  (1996) 261.

[17] A.C. Caballero, E. Nieto and P. Duran,  J Mater Sci 32(12)  (1997) 3257.

[18] R.Z. Zuo, L.T. Li and Z.L. Gui,  Mater Chem Phys 69(1-3)  (2001) 230.
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