Abstract: Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemical vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon, poly-Si wafer and mono-Si wafer, lntra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin films by scan electron microscopy (SEM) technique.

Key words: poly-Si thin film, intra-granular defects, surface