Effect of Deposition Potential on Synthesis, Structural, Morphological and Photoconductivity Response of Cu2O Thin Films by Electrodeposition Technique

doi:10.1007/s40195-019-00876-5

Abstract

Abstract:

The present work describes the effect of deposition potentials on structural, morphological, optical, electrical and photoconductivity responses of cuprous oxide (Cu₂O) thin films deposited on fluorine-doped tin oxide glass substrate by employing electrodeposition technique. X-ray diffraction patterns reveal that the deposited films have a cubic structure grown along the preferential (111) growth orientation and crystallinity of the film deposited at -0.4 V is improved compared to the films deposited at -0.2, -0.3 and -0.5 V. Scanning electron microscopy displays that surface morphology of Cu₂O film has a well-defined three-sided pyramid-shaped grains which are uniformly distributed over the surface of the substrates and are significantly changed as a function of deposition potential. Raman and photoluminescence spectra manifest that the film deposited at -0.4 V has a good crystal quality with higher acceptor concentration compared to other films. UV-visible analysis illustrates that the absorption of Cu₂O thin film deposited at -0.4 V is notably higher compared to other films and the band gap of Cu₂O thin films decreases from 2.1 to 2.04 eV with an increase in deposition potential from -0.2 to -0.5 V. The frequency-temperature dependence of impedance analysis shows that the film deposited at -0.4 V has a high conductivity. I-V measurements elucidate that the film deposited at -0.4 V exhibits a good photoconductivity response compared to films deposited in other deposition potentials.

Key words: Electrodeposition, Cu₂O thin films, Photoconductivity response, I-V measurement

K. P. Ganesan, N. Anandhan, T. Marimuthu, R. Panneerselvam, A. Amali Roselin. Effect of Deposition Potential on Synthesis, Structural, Morphological and Photoconductivity Response of Cu₂O Thin Films by Electrodeposition Technique[J]. Acta Metallurgica Sinica (English Letters), 2019, 32(9): 1065-1074.

Figures/Tables 9

Fig. 1 X-ray diffraction patterns of Cu2O thin films deposited at different deposition potentials: a -0.2 V, b -0.3 V, c -0.4 V, d -0.5 V The crystallite size of the films deposited at different deposition potentials was estimated by using Scherrer formula (Eq. 1) and is summarized in Table 1 [27].

Table 1 Microstructural parameters of the Cu2O thin films

Potential (V)	Crystallite size, D (nm)	Dislocation density, δ×10¹⁴ (lines m^-2)	Micro-strain, ε (×10^-3 lines^-2 m^-4)	Stacking fault probability, α
-0.2	44.11	5.13	0.754	6.86
-0.3	31.76	9.91	0.792	3.80
-0.4	35.00	8.16	0.669	1.50
-0.5	28.37	12.42	0.720	0.60

Fig. 2 SEM micrograph of Cu2O thin films deposited at different deposition potentials: a, b -0.2 V, c, d -0.3 V, e, f -0.4 V, g, h -0.5 V

Fig. 3 Raman spectra of Cu2O thin films deposited at different deposition potentials: a -0.2 V b -0.3 V, c -0.4 V, d -0.5 V

Fig. 4 PL spectra of Cu2O thin films deposited at different deposition potentials: a -0.2 V, b -0.3 V, c -0.4 V, d -0.5 V

Fig. 5 Absorption spectra of Cu2O thin films deposited at different deposition potentials: a -0.2 V, b -0.3 V, c -0.4 V, d -0.5 V

Fig. 6 Tauc’s plots of Cu2O thin films deposited at different deposition potential: a -0.2 V, b -0.3 V, c -0.4 V, d -0.5 V

Fig. 7 Temperature-dependent ac electrical conductivity of Cu2O thin films deposited at different deposited potentials: a -0.2 V, b -0.3 V, c -0.4 V, d -0.5 V, e ac electrical conductivity carried out at 80 °C

Fig. 8 I-V characteristic curves recorded under the dark and illumination conditions for Cu2O thin films deposited at different deposition potentials: a -0.2 V, b -0.3 V, c -0.4 V, d-0.5 V and eI-V characteristic curves under light luminescence

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Effect of Deposition Potential on Synthesis, Structural, Morphological and Photoconductivity Response of Cu₂O Thin Films by Electrodeposition Technique

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