Fig. 1 a, b Less and highly magnified SEM images of the nanoleaf and nanowire structures; c side-view of highly magnified SEM image

Fig. 2 XRD pattern of the InN nanostructure

Fig. 3 SEM image of the as-grown InN nanoleaves a and EDS spectrum corresponding to the spot marked spectrum 37 b

Fig. 4 a TEM image of the individual nanowire, b corresponding HRTEM image and SAED pattern (the inset) of the nanowire, c TEM image of the individual nanoleaf, d corresponding HRTEM image and FFT pattern (the inset) of the nanoleaf, e model of InN atomic accumulation structure, f crystal structure of InN nanoleaf, showing the positively or negatively charged \(\{ 10\bar{1}\bar{1}\}\) and \(\{ 10\bar{1}1\}\) planes

Fig. 5 SEM images of InN nanowires a and InN nanoleaf b based on growth mechanism

Fig. 6 Whole growth process of InN nanowires and nanoleaves at different growth temperatures keeping in accordance with the same growth conditions: a 500 °C, b 550 °C, c 600 °C, d 650 °C, e schematic diagram of InN nanostructure growth in Si (P type: 100) substrate

Fig. 7 a PL spectra of nanoleaf and nanowire at room temperature (300 K), b temperature-dependent PL spectra of nanoleaf