60Co Gamma Irradiation and Annealing Effects on Transport Properties of Antimony Telluride Platelets Grown by Physical Vapor Deposition

doi:10.1007/s40195-015-0232-x

Abstract

Abstract:

Physical vapor deposition method was employed to deposit antimony telluride (Sb₂Te₃) crystals in a dual-zone furnace. The microstructure, surface topography and composition of samples were characterized using X-ray diffraction, atomic force and scanning electron microscopy. Seebeck coefficient (S⊥c), electrical conductivity (σ⊥c) as well as power factor (PF) were enhanced for pure Sb₂Te₃ samples upon annealing, and the samples annealed at 473 K exhibited the highest PF of 3.16 × 10^-3 W m^-1K^-2 with an enhancement of 22% in the figure of merit (Z). When the delivered dose of ⁶⁰Co gamma radiation was increased from 0 to 30 kGy in the stoichiometric crystals, σ⊥c decreased due to the decrease in mobility. As a result of the increase in S, PF and Z improved by 12.11 and 13.7%, respectively, in the 30 kGy gamma-irradiated crystals. Both R_H (B||c) and S⊥c were positive, suggesting that the prepared Sb₂Te₃ crystals retained the p-type semiconductivity after these treatments.

Key words: Antimony telluride, Physical vapor deposition, Irradiation, Annealing, Conductivity, Seebeck coefficient

Thankamma George, A. G. Kunjomana. ⁶⁰Co Gamma Irradiation and Annealing Effects on Transport Properties of Antimony Telluride Platelets Grown by Physical Vapor Deposition[J]. Acta Metallurgica Sinica (English Letters), 2015, 28(5): 559-566.

Figures/Tables 10

Fig. 1 Antimony telluride platelets grown by PVD method

Table 1 Elemental atomic ratio of the grown Sb2Te3 crystals

Sample no.	Gamma dose	Annealing temperature	Sb/Te ratio
1	15 kGy	-	40.19:59.81
2	20 kGy	-	40.19:59.81
3	25 kGy	-	40.25:59.75
4	30 kGy	-	40.79:59.21
5	-	373 K	40.39:59.61
6	-	473 K	40.76:59.24
7	-	573 K	40.98:59.02

Fig. 2 EDAX profile of Sb2Te3 crystals annealed at 473 K which yielded the highest power factor of 3.16 × 10-3 W m-1 K-2

Fig. 3 SEM images of unirradiated Sb2Te3 crystals a; 20 kGy b; 25 kGy c; 30 kGy d gamma ray-irradiated Sb2Te3 crystals; Sb2Te3 crystals annealed at 373 K e; 473 K f

Fig. 4 Powder XRD patterns of as-deposited and annealed (473 K, 573 K) Sb2Te3 crystals a; Gamma-irradiated (0, 25, 30 kGy) Sb2Te3 crystals b

Fig. 5 Variations of mobility and carrier concentration a; Seebeck coefficient and conductivity b; power factor c with annealing temperature of Sb2Te3 crystals

Fig. 6 Dependences of mobility and carrier concentration a; Seebeck coefficient and conductivity b; power factor c on irradiation dose

Fig. 7 AFM images a Distorted lattice, b virgin sample, c strained sample after irradiation with 30 kGy gamma ray dose

Fig. 8 Variations of thermal conductivity a; figure of merit b with annealing temperature

Fig. 9 Variations of thermal conductivity a and figure of merit b with gamma ray dose

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⁶⁰Co Gamma Irradiation and Annealing Effects on Transport Properties of Antimony Telluride Platelets Grown by Physical Vapor Deposition

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