SOLID REACTION BETWEEN PRESSLESS SINTERED Si_3N_4 SUBSTRATE AND Ti-DEPOSITED FILM

Abstract

Abstract: The chemical reaction at solid state between the pressless sintered Si_3N_4 substrate and Ti-de- posited film has been studied by X-ray diffraction analysis.The reaction all depends upon the temperature.It seems no reaction below 973 K:Ti_2N and Ti_5Si_3 form from 1073 to 1123 K: TiN and Ti_5Si_3 form at 1173 K,TiN and Ti_5Si_4 form at 1273 K;while the titanium film di- minishes completely.The lattice parameter of Si_3N_4 is unchanging thrioughout postannealing. This implies that the Ti atoms never dissolve into the Si_2N_4 lattice.

Key words: titanium, silicon nitride, interface, solid reaction

XIAN Aiping SI Zhongyao Institute of Metal Research,Academia Sinica,Shenyang.China XIAN Aiping Institute of Metal Research.Academia Sinica,Shenyang 110015.China. SOLID REACTION BETWEEN PRESSLESS SINTERED Si_3N_4 SUBSTRATE AND Ti-DEPOSITED FILM[J]. Acta Metallurgica Sinica (English Letters), 1990, 3(9): 207-210.

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SOLID REACTION BETWEEN PRESSLESS SINTERED Si_3N_4 SUBSTRATE AND Ti-DEPOSITED FILM

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